Tapati Sarkar Group


G. Datt et al., Combined bottom-up and top-down approach for highly-ordered one-dimensional composite nanostructures or spin insulatronics, ACS Appl. Mater. Interfaces, 13, 37500–37509 (2021); doi: https://doi.org/10.1021/acsami.1c09582

Designing new materials with novel functionalities has been my long-term research interest. In today’s world, designing new materials requires innovations that can go beyond the discovery of single-phase bulk materials. In our research, we strive to push the boundaries of conventional and established process technologies to design materials in unconventional forms (novel nanomaterials, nanocomposites, nanostructured thin films, and one-dimensional morphology) to enhance functionalities aimed at applications ranging from low-power electronics to energy-efficient permanent magnets. 

The materials of interest are strongly correlated electron oxide systems. As the name suggests, these are systems where electrons interact strongly with each other, as a result of which, apart from the electronic charge, its spin and orbital also play important roles. This strong correlation gives rise to new functionalities, especially in reduced dimensions, when, in addition to the existing complexity in the systems, finite size effects also become important. Some exotic and technologically-relevant properties that have been observed in this family of materials are colossal magnetoresistance, multiferroicity, and superconductivity, to name a few. Designing and studying such materials using new and innovative strategies is the focus of my group. We also combine experiments with theoretical modeling to understand the effect of nanostructures on the macroscopic physical properties of these materials.

G. Muscas et al., Nanostructure-driven complex magnetic behavior of Sm2CoMnO6 double perovskite, Journal of Alloys and Compounds, 906, 164385 (2022)
doi: https://doi.org/10.1016/j.jallcom.2022.164385

Vacancy engineering in strongly correlated electron oxide systems for low-voltage resistive switches 

Innovations in resistive switching devices constitute a core objective for the development of novel ultralow-power computing devices. In this work, we have demonstrated mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFe2O4 thin films, fabricated as asymmetric Ti/NiFe2O4/Pt heterostructures. Time-resolved measurements on the devices display both long- and short-term potentiation in the NiFe2O4 resistive switches, ideal for solid-state synapses achieved in a single system. For full details, please see here https://doi.org/10.1021/acsami.4c01501.

Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits, ACS Applied Materials & Interfaces (2024) doi: https://doi.org/10.1021/acsami.4c01501


We thank the following foundations for financial support.

  • The Swedish Research Council (Project grant 2022-25, Starting grant 2018-21)

  •  The ÅForsk Foundation (2022-24)

  • Stiftelsen Olle Engkvist Byggmästare (2022-25, 2020-22, 2018-20)

  • Carl Tryggers Foundation for Scientific Research (2019-21, 2023-25)

  • Wenner-Gren Stiftelserna (2019-21, 2023-25)

  • The Royal Physiographic Society of Lund (2020-22, 2018-20)

  • The Swedish Energy Agency (2019-23)



  • Dr. P. Kuppamuthu (postdoctoral researcher)

  • Dr. A. Shahzad (postdoctoral researcher)

  • Dr. G. Datt (postdoctoral researcher)

  • Dr. R. Maddu (postdoctoral researcher)

  • Dr. G. Kotnana (postdoctoral researcher)

  • Dr. F. Sayed (postdoctoral researcher, in collaboration with R. Mathieu)

  • Dr. P. Maltoni (Ph.D. student, in collaboration with R. Mathieu)

  • Mr. F. Denoel (project assistant)

Last modified: 2024-04-09